Knoch J. Nanoelectronics. Device Physics, Fabrication, Simulation 2020

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Knoch J. Nanoelectronics. Device Physics, Fabrication, Simulation 2020 (Size: 90.59 MB)
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The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well.
Comprehensive overview on latest research and applications.
Problem sets with full solutions given in two steps.
Students' Frequently Asked Questions with detailed answers.
Preface
How to Use the Book
Introduction
Solid-State Physics Foundation
Semiconductor Fabrication
Basic Ingredients for Nanoelectronics Devices
Metal–Oxide–Semiconductor Field-Effect Transistors
Device Simulation
Metal–Source–Drain Field-Effect Transistors
Carbon Nanotube Field-Effect Transistors
Steep Slope Transistors
Device Based on Two-Dimensional MaterialsA
A Color Map for 2D Materials
Bibliography
Index

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